2SK2225 silicon n-channel mos fet ade-208-140 (z) 1st. edition aug. 1993 application high speed power switching features high breakdown voltage (v dss = 1500 v) high speed switching low drive current no secondary breakdown suitable for switching regulator, dc-dc converter outline to-3pfm 1. gate 2. drain 3. source d g s 1 2 3
2SK2225 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 1500 v gate to source voltage v gss 20 v drain current i d 2a drain peak current i d(pulse) * 1 7a body to drain diode reverse drain current i dr 2a channel dissipation pch* 2 50 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 1500 v i d = 10 ma, v gs = 0 gate to source leak current i gss 1 m av gs = 20 v, v ds = 0 zero gate voltage drain current i dss 500 m av ds =1200 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 4.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) ? 12 w i d = 1 a v gs = 15 v* 1 forward transfer admittance |y fs | 0.45 0.75 s i d = 1 a v ds = 20 v* 1 input capacitance ciss 990 pf v ds = 10 v output capacitance coss 125 pf v gs = 0 reverse transfer capacitance crss 60 pf f = 1 mhz turn-on delay time t d(on) 17 ns i d = 1 a rise time t r 50 ns v gs = 10 v turn-off delay time t d(off) 150 ns r l = 30 w fall time t f ?0?s body to drain diode forward voltage v df 0.9 v i f = 2 a, v gs = 0 body to drain diode reverse recovery time t rr 1750 ns i f = 20 a, v gs = 0, di f / dt = 100 a / m s note 1. pulse test
2SK2225 3 80 60 40 20 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area 10 3 1 0.3 0.1 0.03 0.01 10 30 100 300 1000 3000 10000 1 ms operation in this area is limited by r ds(on) ta = 25 ? 100 ? 10 ? pw = 10 ms (1shot) dc operation (tc = 25 ?) 5 4 3 2 1 0 20 40 60 80 100 drain to source voltage v (v) ds drain current i (a) d typical output characteristics 15 v 10 v 7 v 6 v 5 v pulse test v = 4 v gs 8 v 2.0 1.6 1.2 0.8 0.4 0 gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics tc = 75 ? 25 ? ?5 ? v = 25 v pulse test ds 246810
2SK2225 4 50 40 30 20 10 0 gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage 4 8 12 16 20 2 a 1 a i = 3 a d 0.5 a pulse test drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source state resistance vs. drain current 0.1 50 20 10 2 5 1 0.5 0.2 0.5 1 2 5 10 v = 10 v gs 15 v pulse test 20 16 12 8 4 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature 0.5 a, 1 a i = 2 a d gs v = 15 v pulse test forward transfer admittance |yfs| (s) drain current i (a) d forward transfer admittance vs. drain current 10 2 5 1 0.2 0.5 0.1 0.05 0.1 0.2 0.5 1 2 5 tc = ?5 ? 25 ? 75 ? ds v = 25 v pulse test
2SK2225 5 reverse drain current i (a) dr reverse recovery time trr (ns) body to drain diode reverse recovery time 5000 2000 1000 200 500 100 50 0.05 0.1 0.2 0.5 1 2 5 di / dt = 100 a / s, ta = 25 c v = 0, pulse test gs 10000 1000 100 10 0 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage ciss coss crss v = 0 f = 1 mhz gs 10 20 30 40 50 1000 800 600 400 200 0 gate charge qg (nc) drain to source voltage v (v) ds 20 16 12 8 4 0 gate to source voltage v (v) gs dynamic input characteristics 20 40 60 80 100 v = 250 v 400 v 600 v dd v = 250 v 400 v 600 v dd i = 2.5 a d v gs ds v drain current i (a) d switching time t (ns) switching characteristics 1000 200 500 100 20 10 50 0.05 0.1 0.2 0.5 1 2 5 t f r t d(on) t d(off) t v = 10 v pw = 2 ? duty < 1 % gs
2SK2225 6 5 4 3 2 1 0 0.4 0.8 1.2 1.6 2.0 source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage pulse test v = 0, ? v gs 10 v, 15 v 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 2.50 ?/w, tc = 25 ? q g q q tc = 25? normalized transient thermal impedance vs. pulse width d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse
2SK2225 7 vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f switching time test circuit waveform
2SK2225 8 package dimensions 0.66 15.6 0.3 5.5 0.3 3.2 0.3 5.45 0.5 4.0 0.3 5.0 0.3 2.7 0.3 19.9 0.3 21.0 0.5 1.6 0.86 f 3.2 + 0.4 ?0.2 2.6 0.86 5.45 0.5 5.0 0.3 + 0.2 ?0.1 2.0 0.3 0.9 + 0.2 ?0.1 hitachi code jedec eiaj mass (reference value) to-3pfm 5.2 g as of january, 2001 unit: mm
2SK2225 9
2SK2225 10 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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